氧化锌基材料、异质结构及光电器件

Ⅱ-Ⅵ族直接带隙化合物半导体氧化锌（ZnO）的禁带宽度为3.37 eV,室温下激子束缚能高达60 meV,远高于室温热离化能（26 meV）,是制造高效率短波长探测、发光和激光器件的理想材料。历经10年的发展,ZnO基半导体的研究在薄膜生长、杂质调控和器件应用等方面的研究获得了巨大的进展。本文主要介绍了以国家“973”项目（2011CB302000）研究团队为主体,在上述方面所取得的研究进展,同时概述国际相关研究,主要包括衬底级ZnO单晶的生长,ZnO薄膜的同质、异质外延,表面/界面工程,异质结电子输运性质、合金能带工程,p型掺杂薄膜的杂质调控,以及基于上述结果的探测、发光和激光器件等的研究进展。迄今为止,该团队已经实现了薄膜同质外延的二维生长、硅衬底上高质量异质外延、基于MgZnO合金薄膜的日盲紫外探测器、可重复的p型掺杂、可连续工作数十小时的同质结紫外发光管以及模式可控的异质结微纳紫外激光器件等重大成果。本文针对这些研究内容中存在的问题和困难加以剖析并探索新的研究途径,期望能对ZnO材料在未来的实际应用起到一定的促进作用。

ZnO-based Material,Heterojunction and Photoelctronic Device

Zinc oxide (ZnO), as a typical wide bandgap (3.37 eV) semiconductor, has abstracted increasing interests in optoelectronics field. Its large exciton binding energy of 60 meV endows it with high radiative recombination efficiency, which is a unique advantage in light emitting and lasing devices. After more than a decade of developments, the thin film growth, doping and the device study have achieved much improvement. In this review, we introduce a part of results on the above aspects in the last five years. In these improvements, the ones achieved by the "973" project group (2011CB302000) are shown in detail. So far, their jobs cover hertero-and homo-epitaxy of thin film, interface and surface engineering, carrier transport, energy engineering, p-type doping and optoelectronics devices. They have realized the 2-D growth of thin film, epitaxial growth on silicon, solar blind UV detector, LED with dozens-hour continual-operating time, and lasing device with controllable mode. These advancements are expected to accelerate the process of practical applications of ZnO.