| Abstract: | A study of the Seebeck coefficient has shown that doping of polyparaphenylene by ion implantation makes it possible to obtain an electronically doped semiconductor at low energy: n-type with alkali metal ions and p-type with halide ions. At the highest energies (E > 100 keV) the p-type conductivity is due to the creation of defects by irradiation. Generally the semiconductor obtained is degenerate with a Seebeck coefficient close to that obtained by chemical doping. Study of the mechanisms of conduction suggests plots of log σ = (T?l/n); the greater n is, the better is the agreement between the experimental curve and theory. Representation of the conductivity is proposed according to Mott's theories, which are applicable to amorphous semiconductors and involve several conduction processes in the temperature space. For the variable-range-hopping (VRH) mechanism at low temperature, two parameters, α?1 (representing the spatial separation of hopping sites) and N(EF) (the density of states at the Fermi Level) are obtained. |
