Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer |
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| Authors: | Jyh-Chen Chen Gwo-Jiun Sheu Farn-Shiun Hwu Hsueh-I Chen Jinn-Kong Sheu Tsung-Xian Lee Ching-Cherng Sun |
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| Institution: | (1) Department of Mechanical Engineering, National Central University, Jhongli, 32001, Taiwan;(2) Department of Mechanical Engineering, Nanya Institute of Technology, Jhongli, 32091, Taiwan;(3) Institute of Electro-Optical Science and Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 70101, Taiwan;(4) Institute of Optical Sciences, National Central University, Jhongli, 32001, Taiwan |
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| Abstract: | The effects of current distribution in LED chips on the electrical potential and optical light extraction efficiency are investigated
by a numerical simulation. The results show that when the resistivity of the current-spreading layer is decreased there is
current-crowding near the n-contact. On the other hand, when the resistivity in the current-spreading layer increases, there
is current-crowding near the p-contact. When the current is crowded near the n-contact due to less resistivity of the current-spreading
layer, the input power is lower because of the smaller series resistance in the chip, and the light extraction efficiency
is higher since the shadowing effect of the p-contact can be avoided. For L
p = 50 μm in this study, the light extraction efficiency at ρ
ITO = 0.1 × 10−3 Ω·cm is 1.4 times better than that when L
p = 100 μm, even though the driving voltage is raised 1.02 times. |
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| Keywords: | current-spreading light-emitting diodes indium tin oxide numerical simulation light extraction efficiency |
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