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P‐type tin‐oxide thin film transistors for blue‐light detection application |
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| Authors: | Po‐Chun Chen Yu‐Chien Chiu Zhi‐Wei Zheng Chun‐Hu Cheng Yung‐Hsien Wu |
| Affiliation: | 1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan;2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan;3. +886 2 77343514;4. Department of Electronic Engineering, Xiamen University, Xiamen, P.R. China;5. Department of Mechatronic Engineering, National Taiwan Normal University, Taipei, Taiwan |
| Abstract: | We reported the characteristics of p‐type tin‐oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p‐type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue‐light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue‐light radiation is very critical to our eyes, the proposed p‐type SnO TFTs with high sensitivity toward the blue‐light show great potential for future blue‐light detection applications.  |
| Keywords: | thin film transistors p‐type SnO blue light detection |