Performance improvement for epitaxially grown SiGe on Si solar cell by optimizing the back surface field |
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| Authors: | Dun Li Xin Zhao Li Wang Brianna Conrad Anastasia Soeriyadi Anthony Lochtefeld Andrew Gerger Allen Barnett Ivan Perez‐Wurfl |
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| Affiliation: | 1. +61 4 49123588+61 2 9385 7762;2. School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, Australia;3. AmberWave Inc., Salem, USA;4. SolAero Technologies Corp, Albuquerque, USA |
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| Abstract: | This letter reports on the performance improvement of an epitaxially grown SiGe on Si solar cell by optimizing the back surface field (BSF). First, a Si0.18Ge0.82 on silicon (Si) solar cell was fabricated with a 0.25 μm BSF layer. A 25 mV open‐circuit voltage (VOC) improvement was observed on this BSF solar cell compared with the reference solar cell without BSF layer. Then, a Si0.18Ge0.82 on Si solar cell with double BSF layers was designed and fabricated. The measured efficiency of this solar cell is 3.4% when filtered by a GaAs0.79P0.21 top cell. To the best of the authors' knowledge, the 3.4% efficiency reported here is the highest efficiency for SiGe on Si solar cells when filtered by a GaAs0.79P0.21 top cell. The previous best reported efficiency for high Ge composition SiGe on Si solar cell was only 1.7% when filtered by a GaAs0.79P0.21 top cell. |
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| Keywords: | III− V semiconductors silicon back surface field SiGe tandem solar cells |
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