Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C |
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| Authors: | J‐L Battaglia A Kusiak C Gaborieau Y Anguy H T Nguyen C Wiemer R Fallica D Campi M Bernasconi M Longo |
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| Institution: | 1. I2M Laboratory, University of Bordeaux, Talence cedex, France;2. Laboratorio MDM, IMM‐CNR, Unità di Agrate Brianza, Agrate Brianza (MB), Italy;3. Dipartimento di Scienza dei Materiali, Universita' di Milano‐Bicocca, Milano, Italy |
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| Abstract: | The temperature dependent thermal conductivity of In–Sb–Te thin films has been measured by modulated photothermal radiometry in the 20–550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in‐situ Raman spectra. The data suggest that the as‐deposited material consisting of a mixture of polycrystalline InSb0.8Te0.2and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3SbTe2, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8Te0.2phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | In− Sb− Te alloys thin films Te content Raman spectroscopy thermal conductivity crystallization |
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