Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells – a review |
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| Authors: | Daniel Abou‐Ras Sebastian S Schmidt Norbert Schäfer Jaison Kavalakkatt Thorsten Rissom Thomas Unold Roland Mainz Alfons Weber Thomas Kirchartz Ekin Simsek Sanli Peter A van Aken Quentin M Ramasse Hans‐Joachim Kleebe Doron Azulay Isaac Balberg Oded Millo Oana Cojocaru‐Mirédin Daniel Barragan‐Yani Karsten Albe Jakob Haarstrich Carsten Ronning |
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| Institution: | 1. Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany;2. Forschungszentrum Jülich, Institut für Energie‐ und Klimaforschung (IEK‐5), Photovoltaik, Jülich, Germany;3. Max Planck Institute for Solid State Research, Stuttgart, Germany;4. SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury, U.K.;5. Technische Universit?t Darmstadt, Institut für Angewandte Geowissenschaften, Darmstadt, Germany;6. Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem, Israel;7. RWTH Aachen, Physikalisches Institut IA, Aachen, Germany;8. Technische Universit?t Darmstadt, FG Materialmodellierung, Darmstadt, Germany;9. Institut für Festk?rperphysik, Friedrich Schiller Universit?t Jena, Jena, Germany |
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| Abstract: | The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high‐efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep‐defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley–Read–Hall recombination is still enhanced with respect to defect‐free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two‐dimensional device simulations suggest that these defects are one origin of the reduced open‐circuit voltage of the photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | Cu(In Ga)Se2 grain boundaries twin boundaries stacking faults dislocations |
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