Correlation between diode polarization and resistive switching polarity in Pt/TiO2/Pt memristive device |
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| Authors: | Ligang Gao Brian Hoskins Dmitri Strukov |
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| Affiliation: | 1. Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, USA;2. Materials Department, University of California at Santa Barbara, Santa Barbara, USA |
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| Abstract: | We have investigated the correlation between diode polarization and switching polarity in electroformed Pt/TiO2/Pt memristive device. Before forming, the diode direction of the Pt/TiO2/Pt device is reversible under the current pulses with varying current amplitude. The diode polarization arises from oxygen vacancy migration in fully depleted Pt/TiO2/Pt films. The measurement results indicated that only the polarized diode can be electroformed and the metallic suboxide filament is created in parallel to the diode with a switching polarity dependent on the polarization of stack prior to forming. The non‐polar state inhibits field concentration at either end of the device at the specified current, preventing the electroforming. On and off state currents are measured at 0.2 V for 5 × 104 s showing good retention, which is promising for non‐volatile memory application. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | memristive devices TiO2 diodes polarization resistive switching polarity vacancies migration |
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