Generation of thermal donors in silicon: Effect of self-interstitials

The generation of low-temperature thermal donors (TD) in silicon is sensitive to the sample cooling rate (from the anneal to room temperature) and the ambient (air or vacuum). This effect is most clearly pronounced in the case of annealing at 500°C, is noticeable at 480°C, and is practically undetectable at 450°C. The results are interpreted satisfactorily as being due to the TD generation becoming enhanced in the presence of silicon self-interstitial (Si_I) atoms. These atoms are emitted by thermal donors, to be subsequently absorbed by sinks, particularly the sample surface and grown-in microdefects (vacancy voids). When annealing in a vacuum, the surface acts as the main sink. If the anneal is done in air, this sink is passivated as a result of oxidation and/or contamination, with voids becoming the main sinks; as a result, the concentration of Si_I atoms increases substantially and the generation rate is enhanced. Rapid cooling brings about a partial passivation of the voids (as a result of their becoming decorated by rapidly diffusing impurities) and an additional enhancement of the generation rate. The calculated rate curves obtained within this model are well fitted to the experiment.