Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces |
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| Authors: | S Nie CD Lee RM Feenstra Y Ke RP Devaty WJ Choyke CK Inoki TS Kuan Gong Gu |
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| Institution: | aDepartment of Physics, Carnegie Mellon University, Pittsburgh, PA 15213, USA;bDepartment of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA;cDepartment of Physics, University at Albany, SUNY, Albany, NY 12222, USA;dSarnoff Corporation, CN5300, Princeton, NJ 08543, USA |
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| Abstract: | The formation of step bunches and/or facets on hydrogen-etched 6H-SiC(0 0 0 1) and ( ) surfaces has been studied, using both nominally on-axis and intentionally miscut (i.e. vicinal) substrates. It is found that small miscuts on the (0 0 0 1) surface produce full unit-cell high steps, while half unit-cell high steps are observed on the ( ) surface. The observed step normal direction is found to be  for both surfaces. Hence, for intentionally miscut material, a miscut oriented towards this direction produces much better order in the step array compared to a miscut oriented towards a  direction. For (0 0 0 1) vicinal surfaces that are miscut towards the  direction, the formation of surface ripples is observed for 3° miscut and the development of small facets (nanofacets) is found for higher miscut angles. Much less faceting is observed on miscut ( ) surfaces. Additionally, the (0 0 01) surface is found to have a much larger spatial anisotropy in step energies than the ( ) surface. |
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| Keywords: | Atomic force microscopy Step formation and bunching Silicon carbide |
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