Heat resistance of the interface in the silicon-on-diamond structure at a temperature of 80 K |
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| Authors: | D F Aminev A Yu Klokov T I Galkina A I Sharkov and V G Ral’chenko |
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| Institution: | (1) Schulich Faculty of Chemistry, Technion – Israel Institute of Technology, Haifa 32000, Israel; |
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| Abstract: | Heat propagation at liquid nitrogen temperature in a heterostructure consisting of a polycrystalline diamond film deposited
from hydrocarbon plasma on an oriented silicon substrate is studied. A technique for measuring the cooling kinetics of a thin-film
indium thermometer deposited on a diamond film after heating by nanosecond pulses of a nitrogen laser is used. The experimental
data are compared with the results calculated within the theory of heat conduction for multilayer systems. The analysis performedmade
it possible to simultaneously determine the thermal conductivity of the diamond film and the interfacial heat resistance of
diamond/Si and In/diamond interfaces at liquid nitrogen temperature. |
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