| CCD表面暗电流特性研究 |
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| 引用本文： | 雷仁方,王艳,高建威,钟玉杰.CCD表面暗电流特性研究[J].电子科技,2014,27(5):26-28,32. |
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| 作者姓名： | 雷仁方 王艳 高建威 钟玉杰 |
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| 作者单位： | (重庆光电技术研究所 第一研究室,重庆 400060) |
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| 摘 要： | 针对电荷耦合器件表面暗电流的温度特性和辐照特性进行了研究。研究结果表明,在不同温度下,表面暗电流不仅是CCD总暗电流的主要来源,且是CCD暗电流非均匀性的主要影响因素;CCD栅介质的硅-二氧化硅界面态密度随辐照剂量的增加而增加,导致CCD表面暗电流显著增加,是CCD经辐照后暗电流变大的主要影响因素。
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| 关 键 词： | CCD 表面暗电流 界面态密度 温度 辐照 |
Study on Surface Dark Current of CCD |
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| LEI Renfang;WANG Yan;GAO Jianwei;ZHONG Yujie.Study on Surface Dark Current of CCD[J].Electronic Science and Technology,2014,27(5):26-28,32. |
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| Authors: | LEI Renfang;WANG Yan;GAO Jianwei;ZHONG Yujie |
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| Institution: | (No.1 Research Room,Chongqing Optoelectronics Research Institute,Chongqing 400060,China) |
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| Abstract: | The temperature characteristic and ,/radiation characteristic of surface dark current of CCD is investigated. The results indicate that surface dark current is primary resource of CCD dark current and primary influencing factor of CCD dark current nonuniformity. Interface state density located Si-SiO2 interface increased with γ radiation dose, considerably increased surface dark current. That is primary influencing factor of increase on the CCD dark current after γ radiation. |
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| Keywords: | CCD surface dark current interface state density temperature radiation |
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