| 多晶硅真空区熔提纯技术研究 |
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| 引用本文： | 栾国旗,张殿朝,闫萍,高颖,马玉通.多晶硅真空区熔提纯技术研究[J].电子工业专用设备,2010,39(8):16-19. |
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| 作者姓名： | 栾国旗 张殿朝 闫萍 高颖 马玉通 |
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| 作者单位： | 中国电子科技集团公司第四十六研究所,天津,300220 |
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| 摘 要： | 对真空单晶用多晶硅真空区熔提纯技术进行了分析,通过理论实践相结合,对真空区熔提纯过程中的提纯速率、熔区长度、提纯次数以及其它工艺参数进行了分析,制定了获得目标电阻率、型号、直径的有效区熔提纯工艺。
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| 关 键 词： | 多晶硅 提纯 提纯速率 |
Research of the Technology that Polysilicon Was Purifying in Vacuum |
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| LUAN Guoqi,ZHANG Dianchao,YAN Ping,GAO Ying,MA Yutong.Research of the Technology that Polysilicon Was Purifying in Vacuum[J].Equipment for Electronic Products Marufacturing,2010,39(8):16-19. |
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| Authors: | LUAN Guoqi ZHANG Dianchao YAN Ping GAO Ying MA Yutong |
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| Institution: | LUAN Guoqi,ZHANG Dianchao,YAN Ping,GAO Ying,MA Yutong (The 46th Research Institute,CETC,TianJin 300220,China) |
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| Abstract: | The text introduces the technology that polysilicon was purifying in vacuum . Combining theory and practice,we analysis the parameters such as the rate of purification、length of melting zone、 times of purification and others. We formulate the effective process to achieve the objective of resistivity、type and diameter. |
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| Keywords: | Polysilicon Purification Rate of purification |
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