An ultra-high-speed optoelectronic integrated receiver forfiber-optic communications |
| |
Authors: | Yano H Sasaki G Murata M Hayashi H |
| |
Institution: | Sumitomo Electric Ind. Ltd., Yokohama; |
| |
Abstract: | An ultra-high-speed optoelectronic integrated receiver consisting of a GaInAs p-i-n photodiode and a transimpedance AlInAs-GaInAs high-electron-mobility-transistor amplifier was successfully fabricated on an InP substrate. A 3-dB bandwidth of 6 GHz with a transimpedance of 50 dBΩ was achieved for the receiver with a feedback resistance of 750 Ω. Measured noise currents of the receiver were analyzed and found to be dominated by the low-frequency noise and the induced gate noise. A sensitivity of -21.2 dBm for 8.0-Gb/s NRZ signals was deduced from the noise current characteristics |
| |
Keywords: | |
|