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LCVD of copper: Deposition rates and deposit shapes |
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| Authors: | C. R. Moylan T. H. Baum C. R. Jones |
| Affiliation: | (1) IBM Almaden Research Center, 650 Harry Road, 95120-6099 San Jose, CA, USA;(2) Present address: IBM General Technology Div., 330-89E, Rte. 52, 12533 Hopewell Junction, NY, USA;(3) Present address: Systems Technology Div., U36/22-2, 1701North Street, 13760 Endicott, NY, USA |
| Abstract: | Laser chemical vapor deposition of copper has been performed under a variety of conditions. The results are interpreted using the kinetic model of Ehrlich and Tsao. We find that the kinetics of the process are limited by the rates of surface reactions and not by diffusion of reactant molecules to the surface. Furthermore, we find that deposit shapes are quite sensitive to laser intensity and scan rate. |
| Keywords: | 81.15.Gh 82.30.Lp |
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