Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode |
| |
Authors: | Huang Jian-Hua Lü Hong-Liang Zhang Yu-Ming Zhang Yi-Men Tang Xiao-Yan Chen Feng-Ping Song Qing-Wen |
| |
Institution: | School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
| |
Abstract: | In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage. |
| |
Keywords: | 4H-SiC merged PiN/Schottky diode junction termination technology breakdown voltage |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|