Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs |
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Authors: | Chen Jian-Jun Chen Shu-Ming Liang Bin He Yi-Bai Chi Ya-Qing and Deng Ke-Feng |
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Institution: | School of Computer Science, National University of Defense Technology, Changsha 410073, China |
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Abstract: | Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose (TID) effect. However, their capability of resisting the hot carrier effect (HCE) has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers (the annular source nMOSFETs) are also studied to provide a possible alternative for the designers. |
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Keywords: | annular gate nMOSFETs total ionizing dose effect hot carrier effect annular source nMOSFETs |
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