High temperature characteristics of AlGaN/GaN high electron mobility transistors |
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Authors: | Yang Li-Yuan Hao Yue Ma Xiao-Hu Zhang Jin-Cheng Pan Cai-Yuan Ma Ji-Gang Zhang Kai and Ma Ping |
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Institution: | Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; School of Technical Physics, Xidian University, Xi'an 710071, China |
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Abstract: | Direct current (DC) and pulsed measurements are performed to determine the degradation mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas (2DEG). The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature. |
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Keywords: | AlGaN/GaN high electron mobility transistor high temperature characteristics traps current collapse |
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