Recombination-induced stacking faults: evidence for a general mechanism in hexagonal SiC |
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Authors: | Galeckas A Linnros J Pirouz P |
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Affiliation: | Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, SE-164 40 Stockholm, Sweden. |
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Abstract: | We report on optically induced nucleation and expansion of stacking faults in hexagonal SiC structures. The activation energy for partial dislocation glide under optical excitation is found to reduce to 0.25 +/- 0.05 eV, which is about 2 eV lower than for pure thermal activation. From the measurements of thermal activation and below-gap excitation spectroscopy of dislocation glide, we conclude that the elementary process controlling expansion of stacking faults is kink pair nucleation aided by the phonon-kick mechanism. We propose that solitons on 30 degrees Si(g) partials with a silicon core act as deep 2.4 eV + Ev trap sites, readily providing electron-hole recombination energy to enhance the motion of dislocations. Our results suggest that this is a general mechanism of structural degradation in hexagonal SiC. |
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