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Structural and photoluminescence characters of SnO2:Sb films deposited by RF magnetron sputtering
Authors:Yuheng Wang  Jin Ma  Feng Ji  Xuhu Yu  Honglei Ma
Institution:School of Physics and Microelectronics, Shandong University, Shanda Road 27, Jinan, Shandong 250100, PR China
Abstract:The Antimony-doped tin oxide (SnO2:Sb) films have been prepared on glass substrates by RF magnetron sputtering method. The prepared samples are polycrystalline films with rutile structure of pure SnO2 and have preferred orientation of (1 1 0) direction. XRD measurement did not detect the existence of Sb2O3 phase and Sb2O5 phase; Sb ions occupy the site of Sn ions and form the substitution doping. An intensive UV-violet luminescence peak near 392 nm is observed at room temperature. Photoluminescence (PL) properties influenced by sputtering power and annealing for the SnO2:Sb films are investigated in detail and corresponding PL mechanism is discussed.
Keywords:78  66  Hf  78  55  &minus  m  81  15  Cd
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