Mechanism of Charge Transfer in Gallium Arsenide Light-Emitting Structures |
| |
| Authors: | G. F. Karlova L. P. Umbras A. V. Khanin |
| |
| Affiliation: | (1) Federal State Unitary Enterprise Scientific-Research Institute of Semiconductor Devices, Russia |
| |
| Abstract: | The results of experimental investigations into the volt-ampere characteristics (VACs) of gallium arsenide light-emitting diode structures are presented. It is established that VACs of single- and multimesa structures are similar. It is demonstrated that the dependence of the current density on the voltage for the examined structures is well described in the context of the VAC theory of pin diodes. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
