| 碳化硅单晶材料的溶剂热合成与表征 |
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| 作者单位： | 中国科学技术大学,材料科学与工程系,合肥,230026;中国科学技术大学,结构分析研究开放实验室,合肥,230026 |
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| 摘 要： |
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| 关 键 词： | 溶剂热合成 碳化硅 过饱和度 |
Solvothermal Synthesis of SiC Single Crystals |
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| Ning Jiqiang,Yang Beifang,Fu Zhengping,Wang Zhen,Zhang Shuyuan. Solvothermal Synthesis of SiC Single Crystals[J]. Chinese Journal of Chemical Physics, 2004, 17(5): 633-636. DOI: 10.1088/1674-0068/17/5/633-636 |
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| Authors: | Ning Jiqiang Yang Beifang Fu Zhengping Wang Zhen Zhang Shuyuan |
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| Abstract: | SiC single crystals have been prepared by the method of solvothermal synthesis with a system of SiCl4, CCl4 and metal K in an auto clave. X-ray diffraction (XRD), Raman spectra and transmission electron microscopy(TEM) were used to characterize the products. XRD reveals that the products are SiC crystals and TEM exhibits that SiC single crystal sofwires and platelets are obtained under different usages of metal K. The SiC wires have diameters of 10～20 nm and length up to 1.5μm; the platelets have lateral dimensions of 0.1～3 μm, exhibiting regular polygonal shapes and step-bunched side surface. Furthermore, the growth mechanism of the SiC single crystals is discussed and the effect of super saturation on the crystal growth and morphology is also investigated. |
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| Keywords: | Solvo thermal synthesis SiC Super saturation |
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