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EAM-DFB集成光源典型参数特性的电路级分析
引用本文:王世康,潘炜,罗斌.EAM-DFB集成光源典型参数特性的电路级分析[J].固体电子学研究与进展,2007,27(4):572-577.
作者姓名:王世康  潘炜  罗斌
作者单位:西南交通大学信息科学与技术学院,成都,610031;西南交通大学信息科学与技术学院,成都,610031;西南交通大学信息科学与技术学院,成都,610031
基金项目:国家自然科学基金 , 四川省应用基础研究计划 , 教育部科学技术研究重点项目
摘    要:针对电吸收型调制器和分布反馈激光器集成光源(EAM-DFB)的光电混合特征,建立了包含自发辐射、俄歇复合、寄生效应以及隔离电阻的等效电路模型。分析了在不同驱动电流和自发辐射因子下,该模块的输出、调制及噪声特性,并与直接调制DFB作了对比。结果表明,EAM-DFB可生成超短脉冲(小于25 ps);随着驱动电流的增加,输出功率增大、脉冲展宽,噪声增强且峰值点向高频移动;减小自发辐射因子和增加驱动电流均使其调制带宽增加;与DFB相比,EAM-DFB增加了少量噪声,但具有更陡峭的功率-电流特性和更大的调制带宽。

关 键 词:分布反馈激光器  电吸收型调制器  集成光源  等效电路模型  参数特性
文章编号:1000-3819(2007)04-572-06
收稿时间:2006-01-10
修稿时间:2006-05-15

Circuit-level Analysis for the Typical Parameter Property of EAM-DFB
WANG Shikang,PAN Wei,LUO Bin.Circuit-level Analysis for the Typical Parameter Property of EAM-DFB[J].Research & Progress of Solid State Electronics,2007,27(4):572-577.
Authors:WANG Shikang  PAN Wei  LUO Bin
Abstract:Based on the character of photoelectric mixing in electro-absorption modulator in- tegrated distributed-feedback semiconductor laser (EAM-DFB),the equivalent circuit model in- cluding spontaneous emission,Auger recombination,parasitic efforts and isolation resistance is established.Using this model,the output,modulation and noise property of EAM-DFB for dif- ferent bias currents and spontaneous emission factors are analyzed,and compared to these proper- ties of EAM-DFB and DFB.The results indicate that EAM-DFB is capable of generating a optical pulse shorter than 25 ps;increasing bias current can raise output power and spread line-width; enhance noise;induce the peak of noise to shift toward higher frequency.It also found that either decreasing spontaneous emission factor or increasing bias current can broaden modulation band- width.Comparing with DFB,EAM-DFB has more rapid light-current properties and wider mod- ulation bandwidth with little noise increasing.
Keywords:DFB laser  EAM  integrated optical source  equivalent circuit model  parame-ter property
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