CMOS器件60Co γ射线、电子和质子电离辐射损伤比较

利用TRIM95蒙特卡罗软件计算了质子在二氧化硅中的质量阻止本领和能量沉积，比较了质子在二氧化硅中的电离阻止本领与核阻止本领，分析了质子在材料的表面吸收剂量与灵敏区实际吸收剂量的关系.利用⁶⁰Co γ射线、1MeV电子和2—9 MeV质子对CC4007RH和CC4011器件进行辐照实验，比较⁶⁰Co γ射线和带电粒子的电离辐射损伤情况.实验结果表明，⁶⁰Co γ射线、1MeV 电子和2—7MeV质子辐照损伤效应中，在0V栅压下可以相互等效； 关键词： γ射线 电子 质子 辐射损伤

A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons

The stopping power and accumulation energy for protons in SiO2 are calculated by using Monte Carlo software TRIM95. As a result, the ionizing stopping power and the nucleus stopping power are compared for protons in SiO2 , and the relation between absorption dose of material surface and factual absorption dose of sensitive area is discussed. CCA007RH and CC4011 devices were irradiated with Co-60 gamma rays, 1MeV electrons and 1-9MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. The result show that the radiation damages from Co-60 gamma rays, 1MeV electrons and 1-TMeV protons were equivalent for 0V gate bias conditions. Under 5V gate bias, the radiation damage for Co-60 gamma rays was most serious. The distinction in damage between 1MeV electrons and Co-60 gamma rays was not large. The damage from protons below 9MeV was always less than that from Co-60. The lower the proton energy, the less the damage.