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Substrate temperature influenced ZrO2 films for MOS devices |
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| Authors: | Paruchuri Kondaiah SV Jagadeesh Chandra Elvira Fortunato Choi Chel Jong G Mohan Rao DV Rama Koti Reddy S Uthanna |
| Institution: | 1. Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, India;2. Department of Electronics and Communication Engineering, Vignan's Institute of Information Technology (A), Visakhapatnam, Andhra Pradesh, India;3. Departamento de Ciência dos Materiais, CENIMAT/I3N, Faculdade de Ciências eTecnologia (FCT), Universidade Nova de Lisboa, Caparica, Portugal;4. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, South Korea;5. Department of Instrument Technology, Andhra University, Visakhapatnam, Andhra Pradesh, India;6. Department of Physics, Sri Venkateswara University, Tirupati, India |
| Abstract: | The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO2) dielectric films was investigated. Stoichiometric of the ZrO2 thin films was obtained at an oxygen partial pressure of 4.0 × 10−2 Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO2/Si stacks with Al gate electrode. The dielectric properties of ZrO2 layer and interface quality at ZrO2/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10−7 to 0.64 × 10−9 A cm−2 with the increase of substrate temperature from 303 to 673 K. |
| Keywords: | conduction mechanism dielectric constant high-k interface engineering leakage current sputtering |