First-principles study on the adhesive and electronic property of c-BN(111)/Cu(111) interface

The interface properties of c-BN/Cu composite play an important role in its application. In this work, we employed first-principles calculation to investigate the bonding properties and electronic characteristics of the c-BN(111)/Cu(111) interface. The adhesion properties, partial density of states (PDOS), charge density, and charge density difference of different interfaces were analyzed. The results show that the interface of B-termination “OT” stacking mode is the most stable one. The density of states at the c-BN(111)/Cu(111) interface is similar to that of c-BN bulk phase, indicating that the electronic states of the c-BN layer are not affected by the Cu atoms. The PDOS diagram shows that the 2p orbital of B atoms and the 2p orbital of N atoms are hybridized in the c-BN layer. Besides, 2p orbital of B(N) atoms and 3d orbital of Cu atoms are hybridized in the interface. The covalent bonds and ionic bonds in the interface of N-termination and B-termination OT stacking mode structures are stronger than that of “SL” and “TL” stacking mode. So, the OT stacking mode has larger adhesive energy. Furthermore, Cu and c-BN can form a good coherent interface, which can be used to prepare c-BN/Cu composites and functional materials with excellent mechanical properties.