| 硅功率集成技术发展动态 |
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| 引用本文： | 胡刚毅,谭开洲,刘玉奎,张正璠,李开成,江军,胡永贵. 硅功率集成技术发展动态[J]. 微电子学, 2004, 34(2): 101-105 |
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| 作者姓名： | 胡刚毅 谭开洲 刘玉奎 张正璠 李开成 江军 胡永贵 |
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| 作者单位： | 模拟集成电路国家重点实验室,中国电子科技集团公司第二十四研究所,重庆 400060 |
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| 摘 要： | 文章介绍了硅功率集成电路技术的一些发展劝态。单片中小功率智能集成电路发展迅速，以BCD为其主要工艺技术；基于SOI的智能功率集成电路也得到开发。单片集成式的功率管为电源管理小型化、高频、较高可靠性设计提供了新途径，它们在分布式电源、便携式设备仪表中得到广泛应用。
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| 关 键 词： | 硅功率集成电路 BCD SOI 高压集成电路 电源管理 |
| 文章编号： | 1004-3365(2004)02-0101-05 |
Latest Development of Silicon-Based Power Integrated Circuit Technology |
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| HU Gang-yi,TAN Kai-zhou,LIU Yu-kui,ZHANG Zheng-fan,LI Kai-cheng,JIANG Jun,HU Yong-gui. Latest Development of Silicon-Based Power Integrated Circuit Technology[J]. Microelectronics, 2004, 34(2): 101-105 |
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| Authors: | HU Gang-yi TAN Kai-zhou LIU Yu-kui ZHANG Zheng-fan LI Kai-cheng JIANG Jun HU Yong-gui |
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| Abstract: | The latest development of Si-based power IC technology is summarized. Great progress has been made in medium- and small-scale monolithic smart power IC's based on BCD process technology. Smart power IC's based on SOI are also developed. The monolithic integrated power device provides a new approach to minimizing power management systems with high frequency and high reliability, which can find wide applications in distributed power supplies and portable equipments and instruments. |
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| Keywords: | High-voltage IC Power IC BCD process Power management |
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