硒化共溅射Cu—In合金法制备CuInSe2多晶薄膜

用共溅射方法和固态源硒化方法，分别合成了Cu-In合金膜和CuIn(CIS）多晶薄膜，并用XRD，SEM和霍尔效应测量技术，分别测量了两种薄膜的结构、表面形貌春电学性质，分析结果,Cu-In合金膜仅有单峰，晶面间距约2．13A，CIS薄膜的几个主峰与PDF卡中的数据对应得好，并且（112）峰有择优取向，CIS样品的电学参数随着Cu/In比例和基片种类的不同而变化，而电阻从几个到几十个Ω／□，面载流子浓度达10^18/cm^2数量级，迁移率在0．1－3．0cm^2/V.s之间，并讨论了Cu/In比例对两种薄膜性质的影响，分析结果显示，In占总溅射面积的3％是Cu/In比例的转折点，此时，CIS薄膜的结构、PN导电类型都有明显变化，而且用扫描电镜形貌分析也证明了这一点。

Fabrication of Polycrystalline CulnSe2 Film by selenization of Co-sputtered Cu-In Alloys

Using co-sputtering method and selenization technique of solid phase, polycrystalline Cu-In alloy and CuInSe\-2 (CIS) thin film are synthesized. Their structure, morphology on surface and electric property have been measured with X-ray diffraction (XRD), scanning electron microscope (SEM) and Hall effect measurement. The results show that unique peak exists for Cu-In film and the distance of planes is about 2.13. The data of XRD for CIS film confirme its stoichiometric composition and preferential orientation of (112) peak. The electric parameters of CIS film vary with the ratio of Cu:In and the kinds of substrates, including sheet resistance, carrier concentration, mobility and surface morphology of the film. There is a critical point of Cu/In ratio at which the structure, type of conduction and surface roughness of the film change obviously