Fast quasi-optical phase shifter based on the effect of induced photo conductivity in silicon

We study, both numerically and experimentally, a microwave commutator (phase shifter), whose active element comprises a metal plane mirror with a semiconductor plate on it. Phase shifting of the reflected microwave beam is attained by creating a conducting layer in the semiconductor by a laser with quantum energy approximately equal to the forbidden band width. Using a disk of high-purity silicon and a titatnium-sapphire pulsed laser, we study experimentally a 180° phase shifter operated with a Gaussian wave beam at a frequency of 30 GHz. Efficient phase shifting of the wave beam over a time of several nanoseconds is shown at a low power level.