Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN |
| |
Authors: | Liu Fang Qin Zhi-Xin Xu Fu-Jun Zhao Sheng Kang Xiang-Ning Shen Bo and Zhang Guo-Yi |
| |
Institution: | State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China |
| |
Abstract: | Thin tungsten nitride (WNx) films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WNx contact was investigated under various annealing conditions by current-voltage (I-V) measurements. The results show that the gate leakage current was reduced to 10-6 A/cm2 when the N2 flow is 400 mL/min. The results also show that the WNx contact improved the thermal stability of Schottky contacts. Finally, the current transport mechanism in WNx/AlGaN/GaN Schottky diodes has been investigated by means of I-V characterisation technique at various temperatures between 300 K and 523 K. A TE model with a Gaussian distribution of Schottky barrier heights (SBHs) is thought to be responsible for the electrical behaviour at temperatures lower than 523 K. |
| |
Keywords: | AlGaN/GaN heterostructures tungsten nitride Schottky contacts |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |