Effect of a magnetic field on the starting stress and mobility of individual dislocations in silicon |
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Authors: | M. V. Badylevich Yu. L. Iunin V. V. Kveder V. I. Orlov Yu. A. Osip’yan |
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Affiliation: | (1) Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia |
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Abstract: | The strong effect of a magnetic field on the starting stress and mobility of individual dislocations is discovered in silicon grown by the Czochralski method with a high concentration of dissolved oxygen. It is shown that exposure of dislocations preliminarily introduced into the sample to a magnetic field considerably reduces the starting stresses for the motion of these dislocations. The effect is not observed in samples with a low oxygen concentration. It is assumed that the magnetic field induces singlet-triplet transitions in thermally excited states of silicon-oxygen complexes in the dislocation core, thus stimulating a change in the state (atomic configuration) of oxygen already located at dislocations. As a result, the mean binding energy of oxygen with a dislocation decreases. |
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