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Improved initial epitaxial growth of superconducting YBa2Cu3O7 thin films on Y–ZrO2 substrates with a La1.85Sr0.15CuO4 buffer layer
Authors:J Gao  G J Lian  G C Xiong
Institution:

a Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China

b Department of Physics and Mesoscopic Physics National State Key Laboratory, Peking University, 100871 Beijing, People's Republic of China

Abstract:Epitaxial thin films of YBa2Cu3O7 (YBCO) have been deposited on Y–ZrO2 (YSZ) substrates by means of the pulse laser deposition technique. It has been found that the initial epitaxy of YBCO thin films grown on YSZ can be significantly improved by using La1.85Sr0.15CuO4 (LSCO) as a buffer layer. X-ray diffraction measurements show that the epitaxial YBCO films have single in-plane orientation with YBCO 100]short parallelLSCO 100] and LSCO 100]short parallelYSZ 110]. The real-time resistance measurements reveal that with LSCO buffer layers the initial formation of the YBCO ultra-thin films changes from the island growth to the layer-by-layer growth.
Keywords:Electrical resistivity  Superconductivity  Thin films
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