Polysilicon dry etching by a large-area electron beam |
| |
| Authors: | Y. C. Du H. Wang D. C. Sun F. M. Li |
| |
| Affiliation: | (1) Department of Electronic Engineering, Fudan University, Shanghai, PR China;(2) Department of Physics, Fudan University, Shanghai, PR China |
| |
| Abstract: | Dry etching using a novel large-area electron beam has been obtained on polysilicon over SiO2/Si samples in the pressure range 0.1–0.4 Torr. The dependence of etching rate upon electron-beam power density, total pressure of the CF4/He mixture, and the ratio of CF4/He pressure has been determined. An etching rate of 150 nm/min without any addition of O2 has been achieved with a low-energy density electron beam for poly-Si dry etching. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
