Electrical properties of epitaxial heterostructures on a zinc sulfide base |
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Authors: | G É Frank-Kamenetskaya K K Murav'eva I P Kalinkin |
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Institution: | (1) Lensovet Leningrad Technological Institute, USSR |
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Abstract: | An investigation is performed on the volt-ampere, volt-faraday, and photoelectrical characteristics of the epitaxial heterostructures n·ZnS-p-Ge, n-ZnS-p-GaAs, and n-ZnS-n-Si obtained by the method of vacuum evaporation in a quasiclosed volume. The heterotype structures are rectifying, and the current passage therein is described by the theories of space-charge-limited current. The quantity of surface states Ns.s=1.2·1012cm–2 on the interface of n-ZnS-p-GaAs is computed, this being less than the theoretical value by almost two orders of magnitude. The heterostructures n-ZnS-n-Si were of two kinds. The volt-ampere characteristics of the structure of type I are rectifying with a rectification factor of 104 at the 1 V level. The direct current had an exponential dependence and depended weakly on the temperature. The heterostructures had photosensitivity. Their no-load voltage was up to 0.2 V. The structures of type II had volt-ampere characteristics with double saturation. Starting from the model of two series-connected Schottky diodes, the heights of the barriers were computed for such heterostructures: EgZnS=0.8–0.91 eV and ESi=0.66–0.77 eV.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 104–108, July, 1978. |
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