Visible photoluminescence from Ge+-implanted SiO2 films thermally grown on crystalline Si |
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Authors: | YH Ye JY Zhang XM Bao XL Tan LF Chen |
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Institution: | (1) Dept. of Physics, Nanjing Normal University, Nanjing 210097, P.R. China, CN;(2) Dept. of Physics, Nanjing University, Nanjing 210093, P.R. China, CN |
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Abstract: | + -implanted SiO2 films is studied as a function of different fabricating conditions (implantation dose, annealing temperature and time). The
SiO2 films containing Ge nanocrystals exhibit two photoluminescence (PL) bands peaked at 600 nm and 780 nm. There are two excitation
bands in the PL excitation (PLE) spectra. With variation in Ge nanocrystal size, the PL and PLE peak energies show no appreciable
shift. The PL and PLE spectral analyses suggest that during the PL process, electron–hole pairs are generated by the E(l)
and E(2) direct transitions inside Ge nanocrystals, which then radiatively recombine via luminescent centers in the matrix
or at the interface between the nanocrystal/matrix.
Received: 27 January 1998/Accepted: 18 March 1998 |
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Keywords: | PACS: 78 55 Ap 61 46 +w |
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