Low-frequency noises as a tool for UV detector characterisation |
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| Authors: | R ?wirko Z Bielecki J ?wirko L Dobrzański |
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| Institution: | (1) Institute of Electronic Systems, Department of Electronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland;(2) Department of Military Technology, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland;(3) Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland |
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| Abstract: | Ultraviolet (UV) semiconductor detectors are mainly made of materials with wide energy gap, i.e., of AlGaN, GaP, SiC, and
diamond. The article describes methodology of measurements of characteristics of low-frequency noises of UV detectors and
presents the developed measuring system. Basing on analysis of noise characteristics of detectors, an optimal working point
of detector can be determined. The results of measurements of noise characteristics of UV detectors made of AlGaN are shown.
The measurements have been carried out in wide range of temperatures for several values of a detector supply voltage. |
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| Keywords: | UV detector GaN low-frequency noise |
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