| SiGe电荷注入晶体管的直流特性模型 |
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| 引用本文： | 舒斌,张鹤鸣,胡辉勇,宣荣喜,戴显英.SiGe电荷注入晶体管的直流特性模型[J].物理学报,2007,56(2):1105-1109. |
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| 作者姓名： | 舒斌 张鹤鸣 胡辉勇 宣荣喜 戴显英 |
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| 作者单位： | 西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071 |
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| 摘 要： | 为了能直观地体现SiGe/Si电荷注入晶体管的收集极电流与漏源电压的关系，利用输入端SiGe/Si量子阱中二维空穴气的隧道模型，建立起此类器件的输入输出数学模型，并利用MATLAB软件对所建模型进行了模拟，结果显示在漏源电压约为1.5 V时，漏电流出现较强的负微分电阻效应，与文献报道结果符合.
关键词：
SiGe/Si异质结
电荷注入晶体管
二维空穴气
隧道效应
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| 关 键 词： | SiGe/Si异质结 电荷注入晶体管 二维空穴气 隧道效应 |
| 文章编号： | 1000-3290/2007/56(02)/1105-5 |
| 收稿时间： | 4/3/2006 12:00:00 AM |
| 修稿时间： | 04 3 2006 12:00AM |
Mathematical model of DC characteristic of SiGe charge injection transistors |
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| Shu Bin,Zhang He-Ming,Hu Hui-Yong,Xuan Rong-Xi,Dai Xian-Ying.Mathematical model of DC characteristic of SiGe charge injection transistors[J].Acta Physica Sinica,2007,56(2):1105-1109. |
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| Authors: | Shu Bin Zhang He-Ming Hu Hui-Yong Xuan Rong-Xi Dai Xian-Ying |
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| Abstract: | To visualize the relationship between the collector current and source-drain voltage in the SiGe/Si chare injection transistor (CHINT), the mathematical model of this device is set up by using the tunnel model of two-dimensional hole gas(2DHG)in SiGe/Si quantum well. Then the model is simulated by MATLAB, the result shows that the drain current shows strong negative differential resistance when VDS is about 1.5V, which is in accordance with the results of the other papers. |
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| Keywords: | SiGe/Si chare injection transistor two-dimensional hole gas tunnel effect |
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