Effect of oxygen partial pressure and annealing on nanocrystalline p-type ZnO:Sb thin films |
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Authors: | K Samanta AK Arora S Hussain S Chakravarty RS Katiyar |
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Institution: | 1. Condensed Matter Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, India;2. UGC-DAE-CSR, Kalpakkam Node, Kokilamedu 603104, India;3. Department of Physics, University of Puerto Rico, San Juan, PR 00931, USA |
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Abstract: | We have investigated the effect of oxygen partial pressure and annealing on nanocrystalline p-type Sb-doped ZnO thin films, grown by pulsed laser deposition, with hole concentration of 6.5 × 1018/cm3 and mobility of 53 cm2/V-s. Uses of higher working pressure or annealing are found to reduce carrier concentration. A strong correlation is observed between carrier concentration and the violet (3.02 eV) emission related to free Zn-vacancy; stronger the violet emission, smaller the carrier concentration. In contrast to earlier suggestion of using higher oxygen pressure for obtaining p-type conductivity, the present results show a deterioration of the quality of film. |
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