Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism

For the first time, we have presented a novel nanoscale fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI-MOSFET) with modified current mechanism for leakage current reduction. The key idea in this work is to suppress the leakage current by injected carriers decrement into the channel from the source in weak inversion regime while we have created a built-in electric field in the channel for improving the on current of device. Therefore, we have introduced a trapezoidal doping that distributed vertically in the channel and called the proposed structure as vertical trapezoid doping fully depleted silicon-on-insulator MOSFET (VTD-SOI). Using two-dimensional two-carrier simulation we demonstrate that the VTD-SOI decreases the leakage current in comparison with conventional uniform doping fully depleted silicon-on-insulator MOSFET (C-SOI). Also, our results show short channel effects (SCEs) such as drain induced barrier lowering (DIBL) and threshold voltage roll-off improvement in the proposed structure. Therefore, the VTD-SOI structure shows excellent performance for scaled transistors in comparison with the C-SOI and can be a good candidate for CMOS low power circuits.