Epitaxial growth of 4H–SiC{0001} and reduction of deep levels |
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Authors: | T. Kimoto K. Wada K. Danno |
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Affiliation: | aDepartment of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan |
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Abstract: | Homoepitaxial growth of 4H–SiC{0001} by hot-wall chemical vapor deposition (CVD) and characterization of deep levels in both n- and p-type epilayers have been investigated. On 4 off-axis 4H–SiC(0001), formation of macrosteps can be reduced by decreasing the C/Si ratio during CVD, though the growth condition leads to the increase in nitrogen incorporation. The 4H–SiC() face is promising, owing to its very smooth surface morphology even on 4 off-axis substrates and to its superior quality of the oxide/SiC interface. Deep level transient spectroscopy measurements in the wide temperature range from 100 K to 820 K on both n- and p-type 4H–SiC epilayers have revealed almost all the deep levels located in the whole energy range of the bandgap. Thermal annealing at 1350–1700 C of epilayers has resulted in reduction of deep level concentrations by one order of magnitude. |
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Keywords: | Silicon carbide (SiC) Chemical vapor deposition Surface polarity Deep level Impurity doping |
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