Oxide reduced silicon nanowires |
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| Affiliation: | 1. Department of Physics, University of Cape Town, Private Bag X3, Rondebosch 7701, South Africa;2. Materials Research Department, iThemba LABS/National Research Foundation, P.O Box 722, Somerset West, South Africa;3. Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Straße 23, 09596, Freiberg, Germany;4. Institute of Electronic and Sensor Materials, TU Bergakademie Freiberg, Freiberg, Germany;5. Institute for Nuclear and Radiation Physics, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium;6. Department of Physics and Engineering, University of Zululand, P/Bag x1001, KwaDlangezwa, 3886, South Africa |
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| Abstract: | Core crystalline silicon nanowires with a heavily reduced amorphous shell have been successfully synthesised using palladium as a metal catalyst. We present two approaches to reduce the oxidation of the nanowires during the thermal annealing growth. The ratios of the amorphous shell to crystalline core of the nanowires produced, from the two methods, are compared and show a remarkable drop (hence thinner oxide) compared to wires fabricated using currently available techniques. In addition, a focused ion beam was utilised to contact the oxide-reduced nanowires for transport measurements, without first removing the thin oxide shell. The oxygen-reduced core-shell silicon nanowires showed a very low electrical resistivity (4 × 10−1 Ω cm). Our novel approach presents a new alternative to the production of low cost, high yield, highly conducting silicon nanowires offering a wide range of opportunities for semiconductor based technology. |
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| Keywords: | Silicon nanowires Solid liquid solid FIB |
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