缩小步进投影光刻机在碲镉汞红外探测器芯片工艺中的应用

光刻是制备碲镉汞红外探测器芯片过程中非常关键的工艺。目前绝大部分碲镉汞芯片制备都是使用接触式光刻技术，但是在曝光面型起伏较大的芯片时工艺均匀性较差，并且掩膜在与芯片接触时容易损伤芯片。针对接触式光刻的这些缺点，利用尼康公司生产的缩小步进投影光刻机开发了用于碲镉汞芯片的步进式投影曝光工艺。对设备的硬件和软件均进行了小幅修改和设置，使其适用于碲镉汞芯片。经过调试后，缩小步进投影光刻机在某些面型起伏较大的芯片上取得了更好的曝光效果，光刻图形的一致性得到了提升。实验结果表明，缩小步进投影光刻技术能够提高碲镉汞芯片的光刻质量，并在一定程度上改善了芯片制备工艺。

Application of Reduced-Stepper Projection Lithography Machine in HgCdTe Infrared Detector Chip Process

Photolithography is a very critical process in the fabrication of HgCdTe infrared detector chips. At present, most HgCdTe chips are prepared by using contact-lithography technology. However, the process uniformity is poor when exposing chips with large surface undulations, and the mask is easy to damage the chips when contacting with the chips. Aiming at these shortcomings of contact-lithography, a stepper projection exposure process for HgCdTe chips is developed using the reduced-stepper projection lithography machine produced by Nikon. Both hardware and software of the device are slightly modified and set up to work with HgCdTe chips. After debugging, the reduced-stepper projection lithography machine has achieved better exposure effects on some chips with large surface undulations, and the consistency of lithography patterns has been improved. The experimental results show that the reduced-stepper projection lithography technology can improve the lithography quality of HgCdTe chips, and improve the chip preparation process to a certain extent.