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Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory |
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| Institution: | 1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China;2. Department of Physics, Bahauddin Zakariya University, Multan, 60800, Pakistan;3. Department of Physics, University of Okara, Okara, 56300, Pakistan;4. Institute of Chemical Sciences, Bahauddin Zakariya University, Multan, 60800, Pakistan |
| Abstract: | |
| Keywords: | Oxygen annealing Bilayer films Schottky emission Endurance degradation RRAM devices |
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