Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature |
| |
Affiliation: | 1. Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea;2. R&D Center, Wintel Corp, 110-6 Gisanmal-gil, Hwaseong-si, Gyoenggi-do, 18387, Republic of Korea |
| |
Abstract: | SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power N2 plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature (300–500 °C). |
| |
Keywords: | High-power High-density Multi-ICP nitrogen plasma PE-ALD Low-temperature |
本文献已被 ScienceDirect 等数据库收录! |
|