|
|||||
|
|
Structure properties and electrical mechanisms of Si(001)/SiO2 interface with varying Si layer thickness in nano-scale transistor |
|
| Affiliation: | 1. Institute of Intelligent Structure and System, Soochow University, Suzhou, 215006, PR China;2. School of Information Engineering, Suqian College, Suqian, 223800, PR China;3. School of Computer & Communication Engineering, University of Science & Technology Beijing, Beijing, 100083, PR China |
| Abstract: | |
| Keywords: | Si layer thickness Stress/strain Surface potential Threshold voltage Subthreshold swing |
| 本文献已被 ScienceDirect 等数据库收录！ | |