Free electron laser induced two-photon photoconductivity in Hg1-xCdxTe |
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| Authors: | YUAN Xianzhang LU Wei JIANG Jun XU Guosen SHEN Xuechu WANG Mingkai Yang Xueping WU Gang Li Yonggui |
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| Institution: | 1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
2. Free Electron Laser Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100080, China |
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| Abstract: | The Beijing free electron laser ( BFEL) has been employed for the first time to study the nonlinear photoconductivity characteristics
of the typical infrared photoelectronic material Hg1-xCdxTe Taking advantage of the high photon flux density of BFEL, we have investigated the photoconductivity characteristics in
Hg1-xCdx Te induced by two-photon absorption by means of the photoconductivity technique, observed the photoconductivity signals saturation,
and studied the two-photon photoconductivity characteristics on different bias voltages across the sample. |
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| Keywords: | free electron laser two-photon absorption photoconductivity |
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