| Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system |
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| 作者姓名： | 费允杰 王学 王学进 周玉清 熊艳云 冯克安 |
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| 作者单位： | State Key Laboratory of Surface Physics, Condensed Physics Center, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;State Key Laboratory of Surface Physics, Condensed Physics Center, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;State Key Laboratory of Surface Physics, Condensed Physics Center, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;State Key Laboratory of Surface Physics, Condensed Physics Center, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;State Key Laboratory of Surface Physics, Condensed Physics Center, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 50072045). |
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| 摘 要： | Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth using C60 in the hot filament chemical vapour deposition (HFCVD) system.The process of nucleation and growth of diamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described.In order to increase the density of diamond nuclei on the wafers,it is not necessary to use negative bias.The UV-light pre-treatment is not beneficial for improving the diamond nucleation.The multi-layers of C60 molecules,but not a monolayer,can increase the density of diamond nuclei in the presence of H atoms.
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| 关 键 词： | 金刚石薄膜 汽化沉积系统 C60 |
Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system |
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| Fei Yun-Jie,Wang Xue,Wang Xue-Jin,Zhou Yu-Qing,Xiong Yan-Yun and Feng Ke-An.Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system[J].Chinese Physics B,2002,11(3):298-301. |
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| Authors: | Fei Yun-Jie Wang Xue Wang Xue-Jin Zhou Yu-Qing Xiong Yan-Yun and Feng Ke-An |
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| Abstract: | Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth using C60 in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth of diamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described. In order to increase the density of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is not beneficial for improving the diamond nucleation. The multi-layers of C60 molecules, but not a monolayer, can increase the density of diamond nuclei in the presence of H atoms. |
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| Keywords: | diamond thin films scanning electron microscopy C60 |
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