Materials study of silicon-on-lnsulator material by TEM |
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Authors: | E P Kvam J Washburn L P Allen P M Zavracky |
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Institution: | (1) Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, 94720 Berkeley, CA;(2) Kopin Corporation, 02780 Taunton, MA;(3) School of Materials Engineering, Purdue University, 47907 West Lafayette, IN |
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Abstract: | Silicon-on-insulator (SOI) technology addresses the need for many different device applications, such as radiation tolerant
devices, high voltage, and three-dimensional circuitry applications. Isolated silicon epitaxy (ISE) is a commercialised process
which results in excellent SOI material quality with proven results, having overcome most of the obstacles of other processes,
although only having reduced, not eliminated, threading dislocations. The remaining isolated dislocations have been examined
in detail by transmission electron microscopy (TEM). These have been diagnosed as normal lattice dislocations, with no faults
or twins in the material. The nature, source, and behavior of the remaining dislocations is discussed. |
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Keywords: | Silicon-on-insulator dislocations isolated Si epitaxy |
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