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Optical properties and temperature dependence of critical transitions in ZnSe
Authors:R. Granger  J.T. Benhlal  O. Ndap  R. Triboulet
Affiliation:(1) Laboratoire de Physique des Solides, INSA, CS 14315, 35043 Rennes Cedex, France, FR;(2) Laboratoire de Physique des Solides, CNRS, 92195 Meudon Cedex, France, FR
Abstract:The dielectric function of ZnSe has been deduced from ellipsometric measurements between 20 K and 380 K. is analysed around each critical point with the standard critical point model. The variations of the different parameters characterising each transition with temperature are presented and analysed. The temperature coefficients of the energies of the critical transitions are given. is essentially governed by the Coulomb interaction near the fundamental gap. Thanks to the high binding energy of the exciton and the low spectral width of the ellipsometer, the fundamental state of the exciton is found completely separated from the first excited states and the continuum at low temperature. In return the strong transition E1 near the L points of the Brillouin zone can be described equally well with a 2D or an excitonic transition. Received 5 February 1999 and Received in final form 15 June 1999
Keywords:PACS. 78.40.Fy Semiconductors - 78.20.Ci Optical constants (including refractive index   complex dielectric constant   absorption   reflection and transmission coefficients   emissivity) - 71.20.Nr Semiconductor compounds
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