Temperature dependence characterization of metal-insulator-nonuniformly-doped semiconductor solar cell |
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| Authors: | Mahmoud Shaban |
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| Affiliation: | a Department of Electrical Engineering, South Valley University, Aswan 81542, Egypt
b Department of Electrical Engineering, Assuit University, Assuit 71518, Egypt |
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| Abstract: | Four layered metal-insulator-pp+ semiconductor MIS solar cell device was simulated using a comprehensive numerical model. The semiconductor layer was assumed to be nonuniformly-doped in which additional drift electric field inside the semiconductor could be generated. The effects of the electrostatic and kinetic properties of the electronic states at the insulator-semiconductor interface were taken into account. The influences of the operating temperature on the device performance were studied in detail. |
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| Keywords: | MIS solar cell Nonuniform doping profile Temperature dependence J-V characteristics Interface states |
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